Field Effect Transistors: Direct-Write Complementary Graphene Field Effect Transistors and Junctions via Near-Field Electrospinning (Small 10/2014)
نویسندگان
چکیده
منابع مشابه
Direct-write complementary graphene field effect transistors and junctions via near-field electrospinning.
متن کامل
Demonstration of Complementary Ternary Graphene Field-Effect Transistors
Strong demand for power reduction in state-of-the-art semiconductor devices calls for novel devices and architectures. Since ternary logic architecture can perform the same function as binary logic architecture with a much lower device density and higher information density, a switch device suitable for the ternary logic has been pursued for several decades. However, a single device that satisf...
متن کاملGraphene field-effect transistors with ferroelectric gating.
Recent experiments on ferroelectric gating have introduced a novel functionality, i.e., nonvolatility, in graphene field-effect transistors. A comprehensive understanding in the nonlinear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this Letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent ba...
متن کاملEnergy dissipation in graphene field-effect transistors.
We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 kW cm(-2) of dissipated electric power. The metallic contacts act as heat sinks, but not in a dominant fashion. To explain the observed temperature profile and he...
متن کاملDeoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors
We have investigated the effect of deoxyribonucleic acid (DNA) adsorption on a graphene field-effect-transistor (FET) device. We have used graphene which is grown on a Ni substrate by chemical vapour deposition. The Raman spectra of our graphene indicate its high quality, and also show that it consists of only a few layers. The current-voltage characteristics of our bare graphene strip FET show...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Small
سال: 2014
ISSN: 1613-6810
DOI: 10.1002/smll.201470062